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Infrared Light Emitting Diodes
LN51F, LN51L
GaAs Infrared Light Emitting Diodes
For optical control systems
LN51F
o4.60.15
Unit : mm
Glass window
12.7 min.
4.50.2
2-o0.450.05
Features
High-power output, high-efficiency : PO = 6 mW (typ.) Fast response : tr, tf = 1 s (typ.) Infrared light emission close to monochromatic light : P =950 nm (typ.) Narrow directivity, suitable for effective use of optical output : = 8 deg. (LN51L) Wide directivity, matched for external optical systems : = 32 deg. (LN51F) TO-18 standard type package
2.540.25
2 0. 0 1. 1. 0 0. 15
3 45
21
o5.75 max.
1: Cathode 2: Anode
LN51L
o4.60.15 Glass lens
Unit : mm
Absolute Maximum Ratings (Ta = 25C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP
*
Ratings 150 100 2 5 -25 to +100 -30 to +100
Unit mW mA A V C C
12.7 min.
6.30.3
2-o0.450.05
VR Topr Tstg
2.540.25
1. 0 0 .2
f = 100 Hz, Duty cycle = 0.1 %
5 1. 0 0 .1
3 45
21
o5.75 max.
1: Cathode 2: Anode
Electro-Optical Characteristics (Ta = 25C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle LN51F LN51L Symbol PO P VF IR Ct tr tf Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 5V VR = 0V, f = 1MHz IFP = 100mA
The angle in which radiant intencity is 50%
min 3
typ 6 950 50 1.25 0.005 50 1 1 32 8
max
Unit mW nm nm
1.5 10
V A pF s s deg. deg.
1
LN51F, LN51L
Infrared Light Emitting Diodes
IF -- Ta
120 10 2
IFP -- Duty cycle
tw = 10s Ta = 25C 120
IF -- VF
Ta = 25C 100
IF (mA)
IFP (A)
100
10
IF (mA) Forward current
1 10 10 2
Allowable forward current
80
80
Pulse forward current
60
1
60
40
40
10 -1
20
20
0 - 25
0
20
40
60
80
100
10 -2 10 -1
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C )
Duty cycle (%)
Forward voltage VF (V)
IFP -- VF
10 4 10 3
PO -- IFP
(1) tw = 10s Duty Cycle = 0.1% (2) DC Ta = 25C 10
PO -- Ta
IF = 100mA
IFP (mA)
Relative radiant power PO
10 2 (1) 10
Pulse forward current
10 2
Relative radiant power PO
10 3
1
10
1
(2)
1 tw = 10s Duty Cycle = 0.1% Ta = 25C 3 4 5
10 -1
10 -1
0
1
2
10 -2
1
10
10 2
10 3
10 4
10 -1 - 40
0
40
80
Forward voltage VF (V)
Pulse forward current IFP (mA)
Ambient temperature Ta (C )
Spectral characteristics
100 IF = 100mA Ta = 25C
Directivity characteristics
0 100 LN51F 90 80 70 10 20 Ta = 25C 10 2
Frequency characteristics
Ta = 25C
Relative radiant intensity (%)
80
Relative radiant intensity(%)
30
10
60
60 LN51L 50 40
40 50 60 70 80 90
Modulation output
1
40
30 20
10 -1
20
0 800
850
900
950
1000 1050 1100
10 -2 10
10 2
10 3
10 4
Wavelength
(nm)
Frequency f (kHz)
2

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